powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com single igbtmod? nx-series module 600 amperes/1200 volts 1 12/10 rev. 1 QIS1260015 preliminary description: powerex igbtmod? modules are designed for use in switching applications. each module consists of one igbt transistor in a single configuration with a reverse connected rectifier grade free-wheel diode. all components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. features: low drive power low v ce(sat) rectifier grade free-wheel diode isolated baseplate for easy heat sinking applications: ac motor control motion/servo control photovoltaic/fuel cell ordering information: example: select the complete module number you desire from the table below -i.e. QIS1260015 is a 1200v (v ces ), 600 ampere single igbtmod? power module. outline drawing and circuit diagram th th1 (1) th2 (2) g1(1 5) e1(1 6) c(22) e(23) e(24) c(48) c(47) ntc det ail "b" a d e f j j ar z aa ab b ah aj ax aw al am ak ae ad as an aq af ag at au av ap g h p c x t t s s q r q n v u u w ac (4 pla ces) m kk l l y (4 pla ces) det ail "a" det ail "b" det ail "a" 12 34 56 78 91 01 11 21 31 41 51 61 71 81 92 02 12 2 23 24 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 *all pin dimensions wi thin a t olerance of 0.5 dimensions inches millimeters a 5.98 152.0 b 2.44 62.0 c 0.67 17.0 d 5.39 137.0 e 4.79 121.7 f 4.330.02 110.00.5 g 3.89 99.0 h 3.72 94.5 j 0.53 13.5 k 0.15 3.8 l 0.28 7.25 m 0.30 7.75 n 1.95 49.54 p 0.9 22.86 q 0.55 14.0 r 0.87 22.0 s 0.67 17.0 t 0.48 12.0 u 0.24 6.0 v 0.16 4.2 w 0.37 6.5 x 0.83 21.14 y m6 m6 dimensions inches millimeters z 1.53 39.0 aa 1.970.02 50.00.5 ab 2.26 57.5 ac 0.22 dia. 5.5 dia. ad 0.67+0.04/-0.02 17.0+1.0/-0.5 ae 0.51 13.0 af 0.27 7.0 ag 0.03 0.8 ah 0.81 20.5 aj 0.12 3.0 ak 0.14 3.5 al 0.21 5.4 am 0.49 12.5 an 0.15 3.81 ap 0.05 1.15 aq 0.025 0.65 ar 0.29 7.4 as 0.24 6.2 at 0.17 dia. 4.3 dia. au 0.10 dia. 2.5 dia. av 0.08 dia. 2.1 dia. aw 0.06 1.5 ax 0.49 12.5
QIS1260015 single igbtmod? nx-series module 600 amperes/1200 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 2 preliminary 12/10 rev. 1 absolute maximum ratings, t j = 25c unless otherwise specifed characteristics symbol QIS1260015 units power device junction temperature t j -40 to 150 c storage temperature t stg -40 to 125 c mounting torque, m5 mounting screws 31 in-lb mounting torque, m6 main terminal screws 40 in-lb module weight (typical) 330 grams baseplate flatness, on centerline x, y (see below) 0 ~ +100 m isolation voltage (terminals to baseplate, f = 60hz, ac 1 minute) v iso 2500 volts inverter sector collector-emitter voltage (v ge = 0v) v ces 1200 volts gate-emitter voltage (v ce = 0v) v ges 20 volts collector current (dc, t c = 90c) *1,*5,*9 i c 600 amperes peak collector current (pulse) *4 i cm 1200 amperes maximum collector dissipation (t c = 25c) *1,*5 p c 3785 watts emitter currentt (t c = 25c) *1,*5 ,*9 i e *3 600 amperes peak emitter current (pulse) *4 i em *3 1200 amperes *1 case temperature (t c ) and heatsink temperature (t f ) measured point is just under the chips. *3 represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (fwdi). *4 pulse width and repetition rate should be such that device junction temperature (t j ) does not exceed t j(max) rating. *5 junction temperature (t j ) should not increase beyond maximum junction temperature (t j(max) ) rating. *9 use both of each main terminal (collector and emitter) to connect external wiring. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 0 0 0 0 26.7 46.1 71.6 84.9 98.1 38.1 dimensions in mm (tolerance: 1mm) igbt fwdi ntc thermistor chip location (top view) 66.7 50.6 chip location (top view) baseplate flatness measurement point heatsink side ? : concave + : convex ? : concave x y + : convex heatsink side
QIS1260015 single igbtmod? nx-series module 600 amperes/1200 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 3 preliminary 12/10 rev. 1 electrical and mechanical characteristics, t j = 25c unless otherwise specifed inverter sector characteristics symbol test conditions min. typ. max. units collector cutoff current i ces v ce = v ces , v ge = 0v 1.0 ma gate-emitter threshold voltage v ge(th) i c = 60ma, v ce = 10v 6 7 8 volts gate leakage current i ges v ge = v ges , v ce = 0v 0.5 a collector-emitter saturation voltage v ce(sat) i c = 600a, v ge = 15v, t j = 25c *6 2.0 2.6 volts i c = 600a, v ge = 15v, t j = 125c *6 2.2 volts i c = 600a, v ge = 15v, t j = 150c *6 1.9 volts input capacitance c ies 100 nf output capacitance c oes v ce = 10v, v ge = 0v 9.0 nf reverse transfer capacitance c res 2.0 nf total gate charge q g v cc = 600v, i c = 600a, v ge = 15v 3000 nc inductive turn-on delay time t d(on) v cc = 600v, i c = 600a, 660 ns load turn-on rise time t r v ge = 15v, 190 ns switch turn-off delay time t d(off) r g = 2.2 , i e = 600a, 700 ns time turn-off fall time t f inductive loas switching operation 600 ns emitter-collector voltage v ec *3 i e = 600a, v ge = 0v, t j = 25c *6 1.0 1.2 volts i e = 600a, v ge = 0v, t j = 125c *6 0.9 1.1 volts thermal and mechanical characteristics, t j = 25c unless otherwise specifed characteristics symbol test conditions min. typ. max. units module lead resistance r lead main termnals-chip (per switch) 0.6 m thermal resistance, junction to case *1 r th(j-c) q per igbt 0.033 c/w thermal resistance, junction to case *1 r th(j-c) d per fwdi 0.028 c/w contact thermal resistance *1 r th(c-f) thermal grease applied 0.015 c/w (case to heatsink) (per 1 module) *2 internal gate resistance r gint t c = 25c 0.7 1.0 1.3 t c = 125c 1.4 2.0 2.6 external gate resistance r g 1.0 10 ntc thermistor sector , t j = 25c unless otherwise specifed characteristics symbol test conditions min. typ. max. units zero power resistance r t c = 25c 4.85 5.00 5.15 k deviation of resistance ? r/r t c = 100c, r 100 = 493 C7.3 +7.8 % b constant b (25/50) approximate by equation *9 3375 k power dissipation p 25 t c = 25c 10 mw *1 case temperature (t c ) and heatsink temperature (t f ) measured point is just under the chips. *2 typical value is measured by using thermally conductive grease of = 0.9 [w/(m ? k)]. *3 represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (fwdi). *6 pulse width and repetition rate should be such as to cause negligible temperature rise. *9 b (25/50) = in( r 25 )/( 1 C 1 ) r 25 ; resistance at absolute temperature t 25 [k], r 50 ; resistance at absolute temperature t 50 [k], r 50 t 25 t 50 t 25 = 25 [c] + 273.15 = 298.15 [k], t 50 = 50 [c] + 273.15 = 323.15 [k]
QIS1260015 single igbtmod? nx-series module 600 amperes/1200 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 4 preliminary 12/10 rev. 1 collector-emitter voltage, v ce , (volts) capacitance, c ies , c oes , c res , (nf) capacitance vs. v ce (inverter part - typical) 10 0 10 2 10 3 10 2 10 1 10 -1 10 0 10 1 gate-emitter voltage, v ge , (volts) collector-emitter saturation voltage, v ce(sat) , (volts) collector-emitter saturation voltage characteristics (inverter part - typical) 10 6 8 10 14 12 16 18 20 8 6 4 2 0 t j = 25c v ge = 0v c ies c oes c res i c = 1200a i c = 600a i c = 240a collector-emitter voltage, v ce , (volts) collector current, i c , (amperes) output characteristics (inverter part - typical) 0 2 4 6 8 10 0 v ge = 20v 10 11 12 13 15 9 t j = 25 c 1200 800 1000 400 200 600 collector-current, i c , (amperes) collector-emitter saturation voltage, v ce(sat) , (volts ) collector-emitter saturation voltage characteristics (inverter part - typical) 4 3 0 2 1 0 1200 800 1000 400 200 600 v ge = 15v t j = 25c t j = 125c 10 -1 collector current, i c , (amperes) 10 4 10 1 10 2 10 3 10 1 10 2 switching time, (ns) half-bridge switching characteristics (inverter part - typical) t d(off) t d(on) t r v cc = 600v v ge = 15v r g = 1.0? t j = 125c inductive load t f 10 3 gate resistance, r g , (?) 10 4 10 0 10 1 10 3 10 2 switching time, (ns) switching time vs. gate resistance (inverter part - typical) t d(off) t d(on) t r v cc = 600v v ge = 15v i c = 600a t j = 125c inductive load t f 10 2 gate charge, q g , (nc) gate-emitter voltage, v ge , (volts) gate charge vs. v ge (inverter part) 20 0 16 12 8 4 0 1000 2000 4000 3000 5000 v cc = 600v v cc = 400v i c = 600a gate resistance, r g , (?) switching loss, e on , e off , (mj/pulse) 10 3 10 0 10 1 10 2 10 0 10 1 v cc = 600v v ge = 15v i c = 600a t j = 125c inductive load 10 2 switching loss vs. gate resistance (inverter part - typical) e on e off v cc = 600v v ge = 15v r g = 1.0? t j = 125c inductive load e on e off collector current, i c , (amperes) switching loss, e on , e off , (mj/pulse) 10 2 10 1 10 2 10 1 10 0 10 3 switching loss vs. collector current (inverter part - typical)
QIS1260015 single igbtmod? nx-series module 600 amperes/1200 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 5 preliminary 12/10 rev. 1 time, (s) transient thermal impedance characteristics (inverter part - typical) 10 0 10 -5 10 -4 10 -3 10 -1 10 -2 10 -3 10 -3 10 -2 10 -1 10 0 10 1 10 -1 10 -2 10 -3 z th = r th ? (normalized value) single pulse t c = 25c per unit base = r th(j-c) = 0.033c/w (igbt) normalized transient thermal impedance, z th(j-c')
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